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Examples of the the word, wafer , in a Sentence Context

The word ( wafer ), is the 15367 most frequently used in English word vocabulary

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  1. Plasma ashing is the process of removing the photoresist from an etched, wafer , Using a plasma source, a monatomic reactive species is generated. Oxygen or
  2. Semiconductor processing techniques, using the single crystal semiconductor, wafer ,as the active region, or channel. Among the more unusual body materials are
  3. The hand rather than on the tongue. Accordingly, some churches use mechanical, wafer ,dispensers or" pillow packs" ( communion wafer s with wine inside them).
  4. Orientations). Therefore, etching a rectangular hole in a (100)-Si, wafer ,results in a pyramid shaped etch pit with 54.7° walls, instead of a hole with
  5. Trenches. The main difference between the two processes is the temperature the, wafer ,is exposed to while in an ashing chamber. Monatomic oxygen is electrically
  6. Die preparation After preparing many MEMO devices on a silicon, wafer , individual dies have to be separated, which is called die preparation in
  7. Combines several steps in sequence. Modern clean rooms use automated, robotic, wafer , track systems to coordinate the process. The procedure described here omits
  8. Removal. Cleaning If organic or inorganic contamination are present on the, wafer ,surface, they are usually removed by wet chemical treatment,e.g. the RCA
  9. With the goal of combining MEMO and integrated circuits on the same silicon, wafer , The original surface micromachining concept was based on thin poly crystalline
  10. Required multiple steps and flaws would appear at various locations on the, wafer ,during each step. The larger the chip the more likely it would encounter a
  11. The separation is preceded by wafer back grinding in order to reduce the, wafer ,thickness. Wafer dicing may then be performed either by sawing using a cooling
  12. The semiconductor industry to produce thin films. In a typical CVD process,the, wafer ,(substrate) is exposed to one or more volatile s are also produced, which are
  13. Wafer substrate is not directly in the plasma discharge region. Removing the, wafer ,from the plasma region allows processing temperatures down to room temperature.
  14. Semiconductor technology. For some applications, the separation is preceded by, wafer ,back grinding in order to reduce the wafer thickness. Wafer dicing may then be
  15. CVD processes that use heating lamps or other methods to rapidly heat the, wafer ,substrate. Heating only the substrate rather than the gas or chamber walls
  16. Before packaging using automated test equipment (ATE),in a process known as, wafer ,testing, or wafer probing. The wafer is then cut into rectangular blocks, each
  17. Different. For example, after the implantation of nickel ions into a silicon, wafer , a layer of nickel suicide can be grown in which the crystal orientation of
  18. Remote plasma-enhanced CVD (PECVD) – Similar to PECVD except that the, wafer ,substrate is not directly in the plasma discharge region. Removing the wafer
  19. It was once usual for Australian notaries to use an embossed seal with a red, wafer , some now use a red inked stamp that contains the notary's full name and the
  20. For bulk silicon wafer also have been created (SCREAM). Bonding a second, wafer ,by glass fit bonding, anodic bonding or alloy bonding is used to protect the
  21. Microcontrollers as it has infinite endurance and its incremental semiconductor, wafer ,process cost is relatively low. Microcontroller embedded memory technology
  22. Bonded silicon-on-insulator (SOI) wafer s although processes for bulk silicon, wafer ,also have been created (SCREAM). Bonding a second wafer by glass fit bonding
  23. As the plasma is formed, many free radicals are created which could damage the, wafer , Newer, smaller circuitry is increasingly susceptible to these particles.
  24. Reduces that to 140 chips. At this size the yield may be 20 % or 28 chips per, wafer , The Motorola 1975 annual report highlights the new MC6800 microprocessor but
  25. A system of building very-large integrated circuits that uses an entire silicon, wafer ,to produce a single" super-chip ". Through a combination of large size and
  26. And a 150 mm wafer has only 3 defects. However,134 of the 137 dies on the, wafer ,will be acceptable, whereas rejection of the LCD panel would be a 0 % yield. In
  27. Saint Catherine of Genoa. This may imply that Chrétien intended the Mass, wafer ,to be the significant part of the ritual, and the Grail to be a mere prop.
  28. The devices go through final testing on the same or similar ATE used during, wafer ,probing. Industrial CT scanning can also be used. Test cost can account for
  29. Is throughput, i. e., the very long time it takes to expose an entire silicon, wafer ,or glass substrate. A long exposure time leaves the user vulnerable to beam
  30. Is the oldest paradigm of silicon based MEMO. The whole thickness of a silicon, wafer ,is used for building the micromechanical structures. Surface micromachining
  31. Lasers whose emission direction is perpendicular to the surface of the, wafer , VC SEL devices typically have a more circular output beam than conventional
  32. To their larger size. For example, a 300 mm SVGA LCD has 8 defects and a 150 mm, wafer ,has only 3 defects. However,134 of the 137 dies on the wafer will be
  33. As the audience may have expected for such a container, but a single Mass, wafer ,which provided sustenance for the Fisher King’s crippled father. Percival, who
  34. Have less parasitic capacitance) and reduces cost (more CPUs fit on the same, wafer ,of silicon). * Releasing a CPU on the same size die, but with a smaller CPU
  35. Final size was 212 mils (5.4 mm) with an area of (29.0 mm2). At 180 mils,a, wafer ,will hold about 190 chips,212 mils reduces that to 140 chips. At this size the
  36. To reduce unwanted gas-phase reactions and improve film uniformity across the, wafer , Most modern CVD processes are either LPCVD or UHCD. **Ultrahigh vacuum CVD (
  37. Printed with high accuracy at tiny size. The difficulty is that the, wafer ,surface is not perfectly flat, but may vary by several micrometers. Even this
  38. Grown by the technique of thermal oxidation, in which the (typically silicon), wafer , is exposed to oxygen and/or steam, to grow a thin surface layer of silicon
  39. Equipment (ATE),in a process known as wafer testing, or wafer probing. The, wafer ,is then cut into rectangular blocks, each of which is called a die. Each good
  40. Allows electrically charged particles time to recombine before they reach the, wafer ,surface, and prevents damage to the wafer surface. Two forms of plasma ashing
  41. Practice of receiving by distinction (receiving a piece of consecrated bread or, wafer , dipping it in the blessed wine, and consuming it). The most common
  42. Which includes the automatic destruction of defective nanotubes on the, wafer , This process, however,only gives control over the electrical properties on a
  43. Using automated test equipment (ATE),in a process known as wafer testing, or, wafer , probing. The wafer is then cut into rectangular blocks, each of which is called
  44. Where plasma is formed remotely, and the desired particles are channeled to the, wafer , This allows electrically charged particles time to recombine before they reach
  45. The photo resists. For example, in complex integrated circuits, a modern CMOS, wafer ,will go through the photolithographic cycle up to 50 times. Photolithography
  46. To recombine before they reach the wafer surface, and prevents damage to the, wafer ,surface. Two forms of plasma ashing are typically performed on wafer s. High
  47. Their electrical differences and one can produce devices in large scale at the, wafer ,level. This approach was first patented by Naomi Inc. (date of original
  48. Semiconductor manufacturers may use chemical mechanical polishing to make the, wafer ,surface even flatter before lithographic patterning. Ophthalmology and
  49. Were fabricated on 3 inch (75 mm) diameter silicon wafer s. Each, wafer ,could produce 100 to 200 integrated circuit chips or dies. The technical
  50. A frame transfer CCD. While CDs may be manufactured on a heavily doped p++, wafer ,it is also possible to manufacture a device inside p-wells that have been

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